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PDF CHA1077 Data sheet ( Hoja de datos )
| Número de pieza | CHA1077 | |
| Descripción | W-Band Low Noise Amplifier | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CHA1077 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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CHA1077
PRELIMINARY
W-band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1077 is a W-band monolithic 3-stages
low noise amplifier. All the active devices are
internally self-biased. This chip is compatible
with automatic equipment for assembly.
The circuit is manufactured on P-HEMT
process: 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
n W-band low noise amplifier
n High gain
n Wide operating frequency range
n High temperature range
n On-chip self biasing
n Automatic assembly oriented
n Low DC power consumption
n Chip size: 2.6x1.32x 0.1mm
IN OUT
+V -V
W-band amplifier block-diagram
Main Characteristics
Tamb = +25°C
Symbol
F_op
G_lin
NF
P_1dB
Parameter
Operating frequency
Small signal gain
Noise figure
Output power at 1dB
Min Typ Max Unit
76 77 GHz
15 dB
4.5 dB
10 dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHA10773155 - 04 jun 03
1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
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W-band LNA
CHA1077
As the connections at 77GHz (between MMIC and MMIC or between MMIC and
external substrate) are critical, the transition matching network is split into two
parts: one on MMIC and one on the external substrate. This choice allows doing
also a direct connection between MMICs. For a connection to an external
substrate a network is proposed on soft substrate for IN and OUT ports. The
following drawings give the dimensions for a RO3003 substrate
(thickness=0.127mm, εr=3).
500 um
865 um
300 um 235 um 100 um
Proposed matching network for a 50Ω transition between IN port and a µ-
strip line on RO3003 substrate
370 um
500 um
100 um
300 um
235 um
Proposed matching network for a 50Ω transition between OUT port and a
µ-strip line on RO3003 substrate
Ref. DSCHA10773155 - 04 jun 03
5/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CHA1077.PDF ] | |
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