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Número de pieza | PF08134B | |
Descripción | MOS FET Power Amplifier Module | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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PF08134B
MOS FET Power Amplifier Module
for GSM850 and DCS1800/1900 Triple Band Handy Phone
REJ03G0075-0101Z
Rev.1.01
May 13, 2004
Application
• Triple band amplifier for
GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
• For 3.5 V & GPRS Class12 operation compatible
Features
• All in one including output matching circuit
• Simple external circuit
• Simple power control
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max
• High efficiency
47% Typ at 33.5 dBm for GSM850
47% Typ at 32.5 dBm for DCS1800
47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
• RF-Q-8
8 7G6 5
1 2G3 4
1: Pin GSM
2: Vapc
3: Vdd1
4: Pout GSM
5: Pout DCS & Pout PCS
6: Vdd2
7: Vctl
8: Pin DCS & Pin PCS
G: GND
Rev.1.01, May 13, 2004, page 1 of 13
1 page www.DaPtaFS0h8ee1t34U4.Bcom
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Symbol Min Typ Max Unit
Test Condition
Frequency range
f
1850
—
1910
MHz
Band select (DCS active) Vctl
0 — 0.1 V
Input power
Pin
–2 —
2 dBm
Control voltage range
Vapc
0.2 — 2.2
V
Supply voltage
Vdd
3.1 3.5 4.5
V
Total efficiency
2nd harmonic distortion
ηT
2nd H.D.
40 47 —
% Pout DCS = 32.0 dBm,
—
–15
–3
dBm
Vapc controlled
3rd harmonic distortion
3rd H.D.
— –8 –3 dBm
4th~8th harmonic distortion 4th~8th H.D.
—
—
–3
dBm
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
32.0 33.0
—
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
30.5 31.5
—
dBm
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Idd at Low power
Isolation
—
—
— — 150 mA Pout DCS = 5 dBm
—
–42 –37
dBm
Vapc = 0.2 V
Switching time
Stability
tr, tf — 1 2 µs Pout DCS = 0 to 32.0 dBm
— No parasitic oscillation
— Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
< –36 dBm
Vapc DCS ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
—
No degradation
or
Permanent degradation
— Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
—
No degradation
or
Permanent degradation
— Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
AM output
—
—
—
160
200
dB/V
Pout DCS = 0 to 32.0 dBm
— 15 20
% Pout DCS = 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
Rev.1.01, May 13, 2004, page 5 of 13
5 Page www.DaPtaFS0h8ee1t34U4.Bcom
PCS mode (1850 MHz to 1910 MHz)
PCS mode (1850 MHz) Pout, Eff vs. Vapc
40
30
Pin = 0 dBm
Vdd = 3.5 V
20 Vapc = control
10 Tc = 25°C
Pout
100
90
80
70
0 Eff 60
–10 50
–20 40
–30 30
–40 20
–50 10
–60 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
PCS mode (1850 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
30
20
10
0
0 5 10 15 20 25 30 35
Output power Pout (dBm)
PCS mode (1850 MHz) Pout, Eff vs. Pin
37
Vdd = 3.5 V
Tc = 25°C
36
60
55
35 Eff 50
34
Pout
45
33
32
–8
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
–6 –4 –2 0 2 4
Input power Pin (dBm)
6
40
35
8
PCS mode (1910 MHz) Pout, Eff vs. Vapc
40
30
Pin = 0 dBm
Vdd = 3.5 V
20 Vapc = control
10 Tc = 25°C
Pout
100
90
80
70
0 Eff 60
–10 50
–20 40
–30 30
–40 20
–50 10
–60 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
PCS mode (1910 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
30
20
10
0
0 5 10 15 20 25 30 35
Output power Pout (dBm)
PCS mode (1910 MHz) Pout, Eff vs. Pin
37
Vdd = 3.5 V
Tc = 25°C
36
Eff
60
55
35 50
34
Pout
45
33
32
–8
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
–6 –4 –2 0 2 4
Input power Pin (dBm)
6
40
35
8
Rev.1.01, May 13, 2004, page 11 of 13
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PF08134B.PDF ] |
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