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D2058 데이터시트 PDF




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부품번호 D2058 기능
기능 60V, 3A, NPN Transistor, KSD2058, 2SD2058
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D2058 데이터시트, 핀배열, 회로
KSD2058
Low Frequency Power Amplifier
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
www.DataSheet4U.com
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
VCEO
hFE
VCE(Sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 50mA, IB = 0
VCE = 5V, IC = 0.5A
IC = 2A, IB = 0.2A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 15
hFE Classification
Classification
hFE
O
60 ~ 120
Y
100 ~ 200
Value
60
60
7
3
0.5
1.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Min.
60
8
Typ.
3
35
0.65
1.3
0.65
Max.
10
1
Units
µA
mA
V
1.5 V
V
0.4 MHz
pF
µs
µs
µs
G
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000




D2058 pdf, 반도체, 판매, 대치품
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Definition of Terms
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Formative or In
Design
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First Production
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Full Production
Definition
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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This datasheet contains final specifications. Fairchild
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Obsolete
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The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E

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