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부품번호 | UPA1740TP 기능 |
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기능 | SWITCHING N-CHANNEL POWER MOSFET | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1740TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA1740TP is N-channel MOS FET device that features a
low on-state resistance and excellent swiching characteristics, and
www.DataSheet4Ud.ecsoimgned for high voltage applications such as DC/DC converter.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
: Source
4 : Gate
5, 6, 7, 8, 9 : Drain
FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)
• Low input capacitance
Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• Small and surface mount package (Power HSOP8)
• Avalanche capability rated
ORDERING INFORMATION
PART NUMBER
µPA1740TP
PACKAGE
Power HSOP8
14
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
2.0 ±0.2
9
4.1 MAX.
85
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)Note2
Channel Temperature
ID(DC)
ID(pulse)
PT1
PT2
Tch
±7.0
±21
22
1.0
150
A
A
W EQUIVALENT CIRCUIT
W Drain
°C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Repetitive Avalanche Current Note4
Repetitive Avalanche Energy Note4
Tstg
–55 to + 150
°C
IAS 7.0 A
EAS 4.9 mJ
IAR 7.0 A
EAR 2.2 mJ
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
3. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
4. Tch ≤ 125°C, VDD = 100 V, RG = 25 Ω
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15937EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
µPA1740TP
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
Pulsed
25
20 VGS = 10 V
15
10
5
www.DataSheet4U.com 0
0
5 10 15 20 25
VDS - Drain to Source Voltage - V
30
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
Pulsed
10
1
0.1
0.01
Tch = 125°C
75°C
25°C
−25°C
0.001
0.0001
0
5 10
VGS - Gate to Source Voltage - V
15
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5.0
VDS = 10 V
ID = 1 mA
4.5
4.0
3.5
3.0
2.5
2.0
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
1
0.1
0.01
0.01
TA = 125°C
75°C
25°C
−25°C
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
2
Pulsed
1.5
1
0.5 VGS = 10 V
0
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
Pulsed
0.9
0.8
0.7 ID = 7.0 A
0.6 3.5 A
1.4 A
0.5
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4 Data Sheet G15937EJ1V0DS
4페이지 [MEMO]
www.DataSheet4U.com
µPA1740TP
Data Sheet G15937EJ1V0DS
7
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부품번호 | 상세설명 및 기능 | 제조사 |
UPA1740TP | SWITCHING N-CHANNEL POWER MOSFET | NEC |
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