(PDF) AP9452GG Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP9452GG
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP9452GG Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement www.DataSheet4U.com Description G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 20V 50mΩ 4A D S SOT-89 D G Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V3 Continuous Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±16 4 2.5 12 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 100 Unit ℃/W Data and specifications subject to change without notice 201224031 1 page

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PDF AP9452GG Data sheet ( Hoja de datos )