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부품번호 | AP9479GM 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9479GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
www.DataSheet▼4U.cFoamst Switching Characteristic
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
60V
45mΩ
5.6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
60
±25
5.6
4.5
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200127051
AP9479GM
15
ID=5A
12
V DS = 30 V
V DS = 38 V
9 V DS = 48 V
6
www.DataSheet4U.com
3
0
0 10 20
Q G , Total Gate Charge (nC)
30
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1 T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
30
V DS =5V
20
T j =25 o C
T j =150 o C
10
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
10000
C1000 iss
C100 oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10 100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP9479GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9479GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |