(PDF) AP9563GK Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP9563GK
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP9563GK Pb Free Plating Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge www.DataSheet▼4U.cFoamst Switching Characteristic ▼ RoHS Compliant Description D SOT-223 S D G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID -40V 40mΩ -6.8A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -40 ±25 -6.8 -5.4 -30 2.8 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 45 Unit ℃/W Data and specifications subject to change without notice 200914051-1/4 1 page

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PDF AP9563GK Data sheet ( Hoja de datos )