|
|
PDF AP9930M Data sheet ( Hoja de datos )
| Número de pieza | AP9930M | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP9930M (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP9930M
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
www.DataSheet4U.com
LCD Monitor Inverter
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
33mΩ
6.3A
-30V
55mΩ
-5.1A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S P2S
P1G P2G
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
P1N1D
P2N2D
N1G
N1S N2S
Rating
N-channel P-channel
30 -30
± 25 ±25
6.3 -5.1
4.2 -3.4
20 -20
2.0
0.016
-55 to 150
-55 to 150
N2G
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200612032
1 page  
N-Channel
12
10 I D =4.5A
V DS =15V
8
6
www.DataSheet4U.com
4
2
0
0 2 4 6 8 10 12 14
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP9930M
f=1.0MHz
1000
Ciss
Coss
100 Crss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP9930M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP9930AGM | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP9930GM | Power MOSFET ( Transistor ) | Advanced Power Electronics |
| AP9930GM-HF-3 | Quad Complementary N and P-channel Enhancement-mode Power MOSFETs | Advanced Power Electronics |
| AP9930M | Power MOSFET ( Transistor ) | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |