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PDF W55NE10 Data sheet ( Hoja de datos )
| Número de pieza | W55NE10 | |
| Descripción | STW55NE10 | |
| Fabricantes | ST Microelectronics | |
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Hay una vista previa y un enlace de descarga de W55NE10 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STW 55NE10
100 V <0.027 Ω
www.DataSheet4Us.comTYPICAL RDS(on) = 0.021 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
55 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM (•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1999
Va l u e
Un it
100 V
100 V
± 20
V
55 A
35 A
220 A
180 W
1.2 W /o C
9 V/ns
-65 to 175
oC
175 oC
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STW55NE10
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet W55NE10.PDF ] | |
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