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PDF FQPF4N90C Data sheet ( Hoja de datos )
| Número de pieza | FQPF4N90C | |
| Descripción | 900V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V,
ID = 2.0 A
• Low Gate Charge (Typ. 17 nC)
• Low Crss (Typ. 5.6 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
* Drain current limited by maximum junction temperature.
FQP4N90C FQPF4N90C
900
4 4*
2.3 2.3 *
16 16 *
± 30
570
4
14
4.5
140 47
1.12 0.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP9N90C
0.89
0.5
62.5
FQPF9N90CT
2.66
--
62.5
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le p u ls e
※ N o te s :
1.
Zθ
(t)
JC
=
0 .89
℃ /W
M ax.
2 . D u ty F a c to r, D = t /t
12
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
101
Figure 11-1. Transient Thermal Response Curve for FQP4N90C
100
1 0 -1
D =0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in gle p uls e
※ N ote s :
1. Zθ
(t) = 2 .6 6 ℃ /W
JC
M ax.
2 . D u ty F a c to r, D = t1/t2
3. T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11-2. Transient Thermal Response Curve for FQPF4N90C
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQPF4N90C.PDF ] | |
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