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9435GM PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 9435GM
기능 SSM9435GM
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9435GM 데이터시트, 핀배열, 회로
SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-30V
50m
-5.3A
Pb-free; RoHS-compliant SO-8
www.DataSheet4U.com
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9435GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as battery
management and general high-side switch circuits.
The SSM9435GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Value
-30
±20
-5.3
-4.7
-20
2.5
0.02
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
-55 to 150
-55 to 150
°C
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
www.SiliconStandard.com
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9435GM pdf, 반도체, 판매, 대치품
14
12 I D = -5.3A
V DS = -24V
10
8
6
4
2
www.DataSheet4U.com 0
0
4 8 12 16
Q G , Total Gate Charge (nC)
20
Fig 7. Gate Charge Characteristics
100
10
1ms
1
0.1
T A =25 o C
Single Pulse
10ms
100ms
1s
10s
DC
0.01
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
SSM9435GM
f=1.0MHz
1000
C iss
C oss
C rss
100
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty Factor = 0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01
0.1
1
10 100 1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
2/12/2006 Rev.3.01
www.SiliconStandard.com
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