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K3767 PDF 데이터시트 ( Data , Function )

부품번호 K3767 기능
기능 2SK3767
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K3767 데이터시트, 핀배열, 회로
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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
High forward transfer admittance: |Yfs| = 1.6S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.comMaximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 600 V
VDGR 600 V
VGSS ±30 V
ID 2
A
IDP 5
PD 25 W
EAS 93 mJ
IAR 2 A
EAR DataShe4et4U.commJ
Tch 150 °C
Tstg
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°Cinitial)), L = 41mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
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1 2004-12-10




K3767 pdf, 반도체, 판매, 대치품
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RDS (ON) – Tc
10
Common source
VGS =10V
8 pulse test
6
ID=2A
41
0.5
2
0
-100
-50
0
50 100 150 200
Case temperature (°C)
2SK3767
10
Common source
Tc = 25°C
Pulse test
IDR – VDS
1
0.1 10
0.01
0
3
1
VGS = 0, 1 V
0.4
0.8
1.2
Drain-source voltage (V)
1.6
et4U.com
Capacitance – VDS
1000
Ciss
100
Vth – Tc
6
Common source
5 VDS = 10 V
ID = 1 mA
4 Pulse test
CDossataSheet4U.com 3
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10 100
Drian-source voltage VDS (V)
2
1
0
80
40 0
40 80 120
Case temperature Tc (°C)
150
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PD – Tc
50
40
30
20
10
0
0 40 80 120 160
Case temperature Tc (°C)
4
Dynamic Input / output
characteristics
800
16
600
400
200
0
0
200V
100V
VDD = 400V
12
8
Common source
ID = 7.5 A
Tc = 25°C
Pulse test
4
0
2 4 6 8 10 12
Total gate charge Qg (nC)
2004-12-10

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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2SK3767

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