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PDF 2SK3846 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3846 | |
| Descripción | Silicon N-Channel MOS Type Switching Regulator | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
2SK3846
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 33 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V)
www.DataSheetz4U.cEonmhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Drain–gate voltage (RGS = 20 kΩ)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
26
78
25
63
26
2.5
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch–c)
Rth (ch–a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-09-27
1 page  
www.DataSheet4U.com
2SK3846
rth − tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10 μ
0.01
100 μ
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 5.0°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe operating area
1000
100 ID max (Pulse) *
ID max (Continuous)
1 ms *
10 ms *
10
DC operation
Tc = 25°C
1 * Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
Drain−source voltage VDS (V)
100
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 48 μH
Wave form
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-09-27
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3846.PDF ] | |
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