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Datasheet 29F160D Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 29F160D | Boot Sector Flash Memory Am29F160D
Data Sheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to custo | AMD | data |
29F Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 29F001TPC | MX29F001TPC
MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES
5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architectur Macronix International data | | |
2 | 29F002 | 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory M29F002BT M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) � STMicroelectronics data | | |
3 | 29F002 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002/Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s High performance — Access Advanced Micro Devices cmos | | |
4 | 29F002 | 2M (256K X 8) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20868-3E
FLASH MEMORY
CMOS
2M (256K × 8) BIT
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s FEATURES
• • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible Fujitsu Media Devices Limited data | | |
5 | 29F002 | 2M-BIT [256K x 8] CMOS FLASH MEMORY MX29F002/002N
2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES
• • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming ( Macronix International cmos | | |
6 | 29F010 | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory FINAL
Am29F010
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 45 ns maximum access ti Advanced Micro Devices cmos | | |
7 | 29F010 | 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Prog STMicroelectronics data | |
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