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Datasheet 11DF4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 11DF4 | Low Forward Voltage drop Diode FRD Type :11DF4
FEATURES
* Miniature Size * Ultra - Fast Recovery * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 400 Volts Types Available * 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.33g
R |  Nihon Inter Electronics Corporation | diode |
| 2 | 11DF4 | (11DF3 / 11DF4) ULTRA FAST RECTIFIER DIODES 11DF3 - 11DF4
PRV : 300 - 400 Volts Io : 1.0 Ampere
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN.
FEATURES :
* * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfas |  EIC discrete Semiconductors | rectifier |
| 3 | 11DF4 | Diode Schottky 30V 1.1A 2-Pin DO-204AL Box |  New Jersey Semiconductor | diode |
11D Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 11DF1 | (11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES 11DF1 - 11DF2
PRV : 100 - 200 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfast recovery time
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1. EIC discrete Semiconductors rectifier | | |
| 2 | 11DF2 | FRD LOW FORWARD VOLTAGE DROP FRD Type :11DF2
FEATURES
* Miniature Size * Ultra - Fast Recovery * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 400 Volts Types Available * 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.33g
R Nihon Inter Electronics Corporation data | | |
| 3 | 11DF2 | (11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES 11DF1 - 11DF2
PRV : 100 - 200 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfast recovery time
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1. EIC discrete Semiconductors rectifier | | |
| 4 | 11DF3 | (11DF3 / 11DF4) ULTRA FAST RECTIFIER DIODES 11DF3 - 11DF4
PRV : 300 - 400 Volts Io : 1.0 Ampere
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN.
FEATURES :
* * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfas EIC discrete Semiconductors rectifier | | |
| 5 | 11DF4 | Low Forward Voltage drop Diode FRD Type :11DF4
FEATURES
* Miniature Size * Ultra - Fast Recovery * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 400 Volts Types Available * 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.33g
R Nihon Inter Electronics Corporation diode | | |
| 6 | 11DF4 | (11DF3 / 11DF4) ULTRA FAST RECTIFIER DIODES 11DF3 - 11DF4
PRV : 300 - 400 Volts Io : 1.0 Ampere
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN.
FEATURES :
* * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfas EIC discrete Semiconductors rectifier | | |
| 7 | 11DF4 | Diode Schottky 30V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor diode | |
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