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부품번호 | WFF840 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Wisdom technologies | ||
로고 | |||
Wisdom Semiconductor
WFF840
N-Channel MOSFET
Features
■ RDS(on) (Max 0.85 Ω )@VGS=10V
■ Gate Charge (Typical 38nC)
■ Improved dv/dt Capability, High Ruggedness
www.DataSheet4U.c■om100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220F
123
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8.0*
5.1*
32*
±25
320
13.4
5.5
44
0.35
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.86
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Typical Characteristics (Continued)
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1.2
1.1
1.0
0.9 ※Notes:
1.
2.
IVDG=S =2500Vµ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
100 µs 10 µs
101 1 ms
10 ms
DC
100
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uoClse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
IVDG=S
= 10 V
4.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le pu lse
※ N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t) = 0.93 ℃ /W M
Fa
TC
ct
=
o r,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P u lse D ura tio n [se c]
101
Figure 11. Transient Thermal Response Curve
4페이지 Package Dimensions
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TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
WFF840 | N-Channel MOSFET | Wisdom technologies |
WFF840B | Silicon N-Channel MOSFET | Winsemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |