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PDF TSM2832 Data sheet ( Hoja de datos )
| Número de pieza | TSM2832 | |
| Descripción | 20V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM2832
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ
RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ
Features
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Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
2.5V operating voltage
Block Diagram
Ordering Information
Part No.
TSM2832CY
Packing
Tape & Reel
1kpcs per reel
Package
SOT-89
Absolute Maximum Rating (Ta = 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 oC
Ta = 75 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL
Rθja
Limit
20V
±8
3.6
10
1.5
1.0
+150
- 55 to +150
Limit
5
65
Unit
V
V
A
A
W
oC
oC
Unit
S
oC/W
TSM2832
1-1 2003/12 rev. A
1 page  
SOT-89 Mechanical Drawing
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H
G
A
B
E
F
I
C
D
J
SOT-89 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 4.40
4.60
0.173
0.181
B 1.50
1.7
0.059
0.070
C 2.30
2.60
0.090
0.102
D 0.40
0.52
0.016
0.020
E 1.50
1.50
0.059
0.059
F 3.00
3.00
0.118
0.118
G 0.89
1.20
0.035
0.047
H 4.05
4.25
0.159
0.167
I 1.4
1.6
0.055
0.068
J 0.35
0.44
0.014
0.017
TSM2832
5-5 2003/12 rev. A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM2832.PDF ] | |
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