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PDF TSM2323 Data sheet ( Hoja de datos )
| Número de pieza | TSM2323 | |
| Descripción | 20V P-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM2323
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
39 @ VGS = -4.5V
-20 52 @ VGS = -2.5V
68 @ VGS = -1.8V
Features
www.DataSh●eet4AUd.cvoamnce Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
P-Channel MOSFET
Part No.
Package
Packing
TSM2323CX RF SOT-23 3Kpcs / 7” Reel
ID (A)
-4.7
-4.1
-2.0
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 70oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RӨJC
RӨJA
Limit
-20
±8
-4.7
-20
-1.0
1.25
0.8
+150
- 55 to +150
Limit
75
250
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A07
1 page  
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TSM2323
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
2.88
2.91
0.113
0.115
B
0.39
0.42
0.015
0.017
C
1.78
2.03
0.070
0.080
D
0.51
0.61
0.020
0.024
E
1.59
1.66
0.063
0.065
F
1.04
1.08
0.041
0.043
G
0.07
0.09
0.003
0.004
Marking Diagram
23 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM2323.PDF ] | |
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