(PDF) TSM2311 Datasheet - 20V P-Channel Enhancement Mode MOSFET

Número de pieza	TSM2311
Descripción	20V P-Channel Enhancement Mode MOSFET
Fabricantes	Taiwan Semiconductor Company
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No Preview Available ! TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features www.DataSheet4U.com Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2311CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Performance Symbol VDS VGS ID IDM PD TJ TJ, TSTG Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit - 20V ±8 -4 - 20 1.25 0.8 +150 - 55 to +150 Limit 5 100 Unit V V A A W oC oC Unit S oC/W TSM2311 1-1 2003/12 rev. B 1 page

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PDF TSM2311 Data sheet ( Hoja de datos )