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PDF TSM2302 Data sheet ( Hoja de datos )
| Número de pieza | TSM2302 | |
| Descripción | 20V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM2302
20V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 4.5V
VGS = 2.5V
Qg
20
65
95
5.4
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2302CX RF
SOT-23
3kpcs / 7” Reel
TSM2302CX RFG SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Continuous Source Current (Diode Conduction) (Note 2)
Maximum Power Dissipation
Ta = 25°C
Ta = 75°C
VDS
VGS
ID
IDM
IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Thermal Resistance Junction to Foot
Thermal Resistance Junction to Ambient
RӨJF
RӨJA
Limit
20
±8
2.8
8
1.6
1.25
0.8
-55 to +150
Limit
75
145
Unit
V
V
A
A
A
W
°C
Unit
°C/W
°C/W
1/6 Version: C15
1 page  
TSM2302
20V N-Channel MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
02 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: C15
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM2302.PDF ] | |
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