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PDF TSM2301 Data sheet ( Hoja de datos )
| Número de pieza | TSM2301 | |
| Descripción | 20V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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TSM2301
20V P-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
VDS = - 20V
RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ
RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ
Features
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Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2301CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 oC
Ta = 75 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL
Rθja
Limit
- 20V
±8
- 2.3
- 10
1.25
0.8
+150
- 55 to +150
Limit
5
100
Unit
V
V
A
A
W
oC
oC
Unit
S
oC/W
TSM2301
1-1 2003/12 rev. C
1 page  
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E
A
B
DC
SOT-23 Mechanical Drawing
F
G
SOT-23 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 2.88
2.91
0.113
0.115
B 0.39
0.42
0.015
0.017
C 1.78
2.03
0.070
0.080
D 0.51
0.61
0.020
0.024
E 1.59
1.66
0.063
0.065
F 1.04
1.08
0.041
0.043
G 0.07
0.09
0.003
0.004
TSM2301
5-5 2003/12 rev. C
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM2301.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSM2301 | 20V P-Channel Enhancement Mode MOSFET | Taiwan Semiconductor Company |
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| TSM2301B | 20V P-Channel MOSFET | Taiwan Semiconductor Company |
| TSM2302 | 20V N-Channel Enhancement Mode MOSFET | Taiwan Semiconductor Company |
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