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PDF 6AM11 Data sheet ( Hoja de datos )
| Número de pieza | 6AM11 | |
| Descripción | Silicon N-channel/p-channel Power MOS Fet Array | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 6AM11 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
6AM11
Electrical Characteristics (Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Drain to source
breakdown voltage
V(BR)DSS 60 — — –60 — — V
ID = 10 mA, VGS = 0
Gate to source
breakdown voltage
V(BR)GSS
±20 —
—
±20 —
—
V
IG = ±100 µA, VDS = 0
Gate to source leak
current
I GSS
— — ±10 — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain IDSS
current
— — 250 — — –250 µA VDS = 50 V, VGS = 0
Gate to source cutoff
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Static drain to source
on state resistance
VGS(off)
RDS(on)
Forward transfer
admittance
Input capacitance
Output capacitance
|yfs|
Ciss
Coss
1.0 — 2.0 –1.0 — –2.0 V
ID = 1 mA, VDS = 10 V
— 0.13 0.17 — 0.15 0.2 Ω
— 0.18 0.24 — 0.20 0.27 Ω
2.7 4.5 — 2.7 5.0 — S
— 400 — — 900 — pF
— 220 — — 460 — pF
ID = 2.5 A,
VGS = 10 V*1
ID = 2.5 A, VGS = 4 V*1
ID = 2.5 A,
VDS = 10 V*1
VDS = 10 V, VGS = 0,
f = 1 MHz
Reverse transfer
capacitance
Crss
— 60 — — 130 — pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode
forward voltage
t d(on)
tr
t d(off)
tf
VDF
—5
— —8
— ns ID = 2.5 A, VGS = 10 V,
— 30 — — 35 — ns RL = 12 Ω
— 170 — — 180 — ns
— 75 — — 85 — ns
— 1.0 — — –1.0 — V
IF = 5 A, VGS = 0
Body to drain diode
t rr
reverse recovery time
— 100 — — 170 — ns IF = 5 A, VGS = 0,
diF/dt = 50 A/µs
Note: 1. Pulse Test
Polarity of test conditions for P channel device is reversed.
5 Page 
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.5 Pulse Test
VGS = 4 V
0.2 10 V
0.1
0.05
0.02
0.01
0.5
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1.0 2
5 10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
20 Pulse Test
10
TC = 25°C
–25°C
5
75°C
2
1.0
0.5
0.1
0.2 0.5 1.0 2
Drain Current ID (A)
5
10
6AM11
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4 ID = 10 A
5A
0.3 2 A
VGS = 4 V
0.2
0.1
0
–40
VGS = 10 V
2A
10 A 5 A
0 40 80 120
Case Temperature TC (°C)
160
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
200 Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 6AM11.PDF ] | |
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