K3667 Datasheet PDF - Toshiba Semiconductor
| Part Number | K3667 | |
| Description | MOSFET ( Transistor ) - 2SK3667 | |
| Manufacturers | Toshiba Semiconductor | |
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2SK3667
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3667
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.5S (typ.)
• Low leakage current: IDSS = 100μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
7.5
30
45
189
7.5
4.5
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
3
1 2006-11-08
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2SK3667
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rth – tw
10
1 Duty=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
100 µs *
10 ID max (CONTINUOUS) *
1 ms *
1 DC OPERATION
Tc = 25°C
※ SINGLE NONREPETITIVE PULSE
0.1 Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
400
300
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 5.88mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
5 2006-11-08
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K3667 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - N-Ch, MOSFET, 600V, (Transistor) [ Learn More ] | |
| Download | [ K3667.PDF Datasheet ] | |
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