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PDF RD16HHF1 Data sheet ( Hoja de datos )
| Número de pieza | RD16HHF1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
OUTLINE DRAWING
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
www.DataSheet4U.com
4
note(3)
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
1 23
PINS
1:GATE
2:SOURCE
3:DRAIN
4:FIN(SOURCE)
RoHS COMPLIANT
note:
(1)Torelance of no designation means typical value.
Dimension in mm.
(2) :Dipping area
RD16HHF1-101 is a RoHS compliant products.
(3) :Copper of the ground work is exposed in case of frame separation.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD16HHF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TEST CIRCUIT(f=30MHz)
Vgg Vdd
www.DataSheet4U.com
R F -IN
8.2K ohm
220pF 68pF 100pF
1K ohm
C2 L3
20pF
220pF
100pF
L2
C1
C1 L1
RD 16HHF 1
C1
3 3 0 uF ,5 0 V
10uF,50V *3pcs
C1
88pF
1 ohm
82pF
L4
100pF
200pF
L5
200pF
C2
RF -O UT
15
65
75
85
90
100
5
1.5
15
34
41
43
45
67
91
100
C 1:100pF,0.022uF,0.1uF in parallel
C 2:470pF*2 in parallel
L1:10Turns,I.D 8mm,D 0.9mm copper wire
L2:10Turns,I.D 6mm,D 1.6mm silver plateted copper wire
L3:9Turns,I.D 5.6mm,D 0.9mm copper wire
L4:4Turns,I.D 5.6mm,D 0.9mm,P =0.5mm copper wire
L5:5Turns,I.D 5.6mm,D 0.9mm,P =1mm copper wire
D imensions:mm
Note:Board material-teflon substrate
micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm
/
RD16HHF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RD16HHF1.PDF ] | |
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