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HIRF740 데이터시트 PDF




Hi-Sincerity Mocroelectronics에서 제조한 전자 부품 HIRF740은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 HIRF740 자료 제공

부품번호 HIRF740 기능
기능 N-Channel Power MOSFET / Transistor
제조업체 Hi-Sincerity Mocroelectronics
로고 Hi-Sincerity Mocroelectronics 로고


HIRF740 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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HIRF740 데이터시트, 핀배열, 회로
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
Description
This N-Channel MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and cost-
www.DataSheeffeet4cUti.vceomness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF740 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF740 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain to Current (Continuous)(VGS@10V, TC=25oC)
Drain to Current (Continuous)(VGS@10V, TC=100oC)
Drain to Current (Pulsed)*1
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS
IAR
EAR
dv/dt
TJ,Tstg
TL
Single Pulse Avalanche Energy*2
Avalanche Current*1
Repetitive Avalanche Energy*1
Peak Diode Recovery*3
Operating Junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1.6mm
from case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25, IAS=10A
*3: ISD10A, di/dt120A/us, VDDV(BR)DSS, TJ150°C
HIRF740, HIRF740F
Value
400
10
6.3
40
±20
74
38
0.59
0.3
520
10
13
4
-55 to 150
300
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
HSMC Product Specification




HIRF740 pdf, 반도체, 판매, 대치품
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
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TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 4/4
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HIRF740, HIRF740F
HSMC Product Specification

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관련 데이터시트

부품번호상세설명 및 기능제조사
HIRF740

N-Channel Power MOSFET / Transistor

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
HIRF740F

N-Channel Power MOSFET / Transistor

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