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부품번호 | HIRF740 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | Hi-Sincerity Mocroelectronics | ||
로고 | |||
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
Description
This N-Channel MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and cost-
www.DataSheeffeet4cUti.vceomness.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF740 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF740 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain to Current (Continuous)(VGS@10V, TC=25oC)
Drain to Current (Continuous)(VGS@10V, TC=100oC)
Drain to Current (Pulsed)*1
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS
IAR
EAR
dv/dt
TJ,Tstg
TL
Single Pulse Avalanche Energy*2
Avalanche Current*1
Repetitive Avalanche Energy*1
Peak Diode Recovery*3
Operating Junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1.6mm
from case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25Ω, IAS=10A
*3: ISD≤10A, di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C
HIRF740, HIRF740F
Value
400
10
6.3
40
±20
74
38
0.59
0.3
520
10
13
4
-55 to 150
300
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
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TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 4/4
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HIRF740, HIRF740F
HSMC Product Specification
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부품번호 | 상세설명 및 기능 | 제조사 |
HIRF740 | N-Channel Power MOSFET / Transistor | Hi-Sincerity Mocroelectronics |
HIRF740F | N-Channel Power MOSFET / Transistor | Hi-Sincerity Mocroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |