Datasheet.kr   

P4C1026 데이터시트 PDF




Pyramid Semiconductor에서 제조한 전자 부품 P4C1026은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 P4C1026 자료 제공

부품번호 P4C1026 기능
기능 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
제조업체 Pyramid Semiconductor
로고 Pyramid Semiconductor 로고


P4C1026 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 10 페이지수

미리보기를 사용할 수 없습니다

P4C1026 데이터시트, 핀배열, 회로
P4C1026
ULTRA HIGH SPEED 256K x 4
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 15/20/25/35 ns (Commercial/Industrial)
– 20/25/35 ns (Military)
Low Power
www.DataSheet4U.Scoinmgle 5V±10% Power Supply
Data Retention with 2.0V Supply
Three-State Outputs
TTL/CMOS Compatible Outputs
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil SOJ
– 28-Pin 400 mil SOJ
– 28-Pin 400 mil Ceramic DIP
– 32-Pin Ceramic LCC
DESCRIPTION
The P4C1026 is a 1 Meg ultra high speed static RAM
organized as 256K x 4. The CMOS memory requires no clock
or refreshing and has equal access and cycle times. Inputs
and outputs are fully TTL-compatible. The RAM operates
from a single 5V±10% tolerance power supply. With battery
backup, data integrity is maintained for supply voltages down
to 2.0V.
Access times as fast as 15 nanoseconds are available,
permitting greatly enhanced system speeds. CMOS is
utilized to reduce power consumption.
TheP4C1026is availableina28-pin300miland400milSOJ
packages, as well as Ceramic DIP and LCC packages,
providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
SOJ (J5, J7), DIP (C7)
LCC(L13)
Document # SRAM127 REV E
Revised April 2007
1




P4C1026 pdf, 반도체, 판매, 대치품
P4C1026
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
-15
Min Max
tRC Read Cycle Time
tAA Address Access Time
tAC Chip Enable Access Time
tOH Output Hold from Address Change
tLZ Chip Enable to Output in Low Z
tHZ Chip Disable to Output in High Z
www.DataShtePUet4U.coCmhip Enable to Power Up Time
tPD Chip Disable to Power Down Time
15
15
15
2
2
8
0
15
-20
Min Max
20
20
20
2
3
9
0
20
-25
Min Max
25
25
25
2
3
10
0
25
-35
Min Max
35
35
35
2
3
11
0
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)(5)
TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)(5,6)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE transition LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM127 REV E
Page 4 of 10

4페이지










P4C1026 전자부품, 판매, 대치품
ORDERING INFORMATION
P4C1026
www.DataSheet4U.com
SELECTION GUIDE
The P4C1026 is available in the following temperature, speed and package options.
Temperature
Range
Package
Speed
15 20 25
Commercial Plastic SOJ, 300 mil
-15J3C
-20J3C
-25J3C
Plastic SOJ, 400 mil
-15J4C
-20J4C
-25J4C
Industrial
Plastic SOJ, 300 mil
-15J3I
-20J3I
-25J3I
Plastic SOJ, 400 mil
-15J4I
-20J4I
-25J4I
Military
Ceramic DIP, 400 mil
Temperature 28-Pin Ceramic LCC
N/A
N/A
-20CM
-20L28M
-25CM
-25L28M
32-Pin Ceramic LCC
N/A
-20L32M
-25L32M
Military
Ceramic DIP, 400 mil
N/A
-20CMB
-25CMB
Processeed* 28-Pin Ceramic LCC
N/A -20L28MB -25L28MB
32-Pin Ceramic LCC
N/A -20L32MB -25L32MB
* Military temperature range with MIL-STD-883, Class B compliance
N/A = Not Available
1513 10
35
-35J3C
-35J4C
-35J3I
-35J4I
-35CM
-35L28M
-35L32M
-35CMB
-35L28MB
-35L32MB
Document # SRAM127 REV E
Page 7 of10

7페이지


구       성 총 10 페이지수
다운로드[ P4C1026.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
P4C1023

LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM

Pyramid Semiconductor
Pyramid Semiconductor
P4C1023L

LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM

Pyramid Semiconductor
Pyramid Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵