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Número de pieza | SPI80N04S2-H4 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPI80N04S2-H4 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
Product Summary
VDS 40 V
RDS(on)
4 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N04S2-H4
SPB80N04S2-H4
SPI80N04S2-H4
Package
Ordering Code
P- TO220 -3-1 Q67060-S6014
P- TO263 -3-2 Q67060-S6013
P- TO262 -3-1 Q67060-S6014
Marking
2N04H4
2N04H4
2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
660
25
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-08
1 page www.DataSheet4U.com
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N04S2-H4
Ptot = 300W
A
hgf
160
140
120
100
80
VGS [V]
ea
4.0
b 4.5
c 5.0
d 5.5
e 6.0
f 6.5
g 7.0
d
h 10.0
60
40 c
20
b
0a
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPI80N04S2-H4
SPP80N04S2-H4,SPB80N04S2-H4
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
13 SPP80N04S2-H4
Ω
d
e
11
10
9
8
7
6
5f
4g
h
3
2
VGS [V] =
1
de f
5.5 6.0 6.5
0
0 20 40
gh
7.0 10.0
60 80
100 120 140
A 180
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
140
S
120
100
100
80
80
60
60
40
40
20 20
0
0 1 2 3 4V 6
VGS
Page 5
0
0 20 40 60 80 100 120 A 160
ID
2003-05-08
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPI80N04S2-H4.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPI80N04S2-H4 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N04S2-H4 | Power-Transistor | Infineon Technologies |
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