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PDF SPI80N03S2L-06 Data sheet ( Hoja de datos )
| Número de pieza | SPI80N03S2L-06 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI80N03S2L-06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
Product Summary
VDS 30 V
RDS(on) max. SMD version 5.9 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-06
SPB80N03S2L-06
SPI80N03S2L-06
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4088
Q67042-S4089
Q67042-S4092
Marking
2N03L06
2N03L06
2N03L06
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
240
15
6
±20
150
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page  
www.DataSheet4U.com
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N03S2L-06
Ptot = 150W
A
ef d
160
140
120
100
80
VGS [V]
a 3.5
b
cc
4.0
4.5
d 5.0
e 6.0
f 10.0
b
60
40 a
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
100
mΩ
80
70
a
b
VGS[V]=
a= 3.5
b= 4
c c= 4.5
d= 5
e= 6
f= 10
60
50
40 d
30
20
10 e
0f
0 20 40 60 80 100 120 140 160 A 200
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
120
100
80
60
40
20
0
0 0.5
1 1.5
2 2.5
3 3.5 4
V5
VGS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
120
S
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 A 120
ID
Page 5
2003-05-09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI80N03S2L-06.PDF ] | |
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