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PDF ES29LV160F Data sheet ( Hoja de datos )

Número de pieza ES29LV160F
Descripción Boot Sector Flash Memory
Fabricantes Excel Semiconductor 
Logotipo Excel Semiconductor Logotipo



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ES29LV160F
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory

1 page




ES29LV160F pdf
ES29LV160F
Excel Semiconductor Inc.
www.DataSheet4U.com
The hardware RESET# pin terminates any operation in progress and resets the internal state
machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A
system reset would thus also reset the device, enabling the system microprocessor to read the
boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified
amount of time, the device enters the automatic sleep mode. The system can also place the
device into the standby mode. Power consumption is greatly reduced in both these modes.
ESI’s Flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot
electron injection.
1. Product Selector Guide
Family Part Number
Speed Option
Voltage Range ( Vcc )
Max access time, ns (tACC )
Max CE# access time, ns (tCE )
Max OE# access time, ns (tOE )
Note
See AC Characteristics on page 45 for full specifications.
ES29LV160F
55R 70
3.0 ~3.6V
2.7 ~3.6V
55 70
55 70
25 30
Rev.0A (Dec 12, 2007) 5

5 Page





ES29LV160F arduino
ES29LV160F
Excel Semiconductor Inc.
www.DataSheet4U.com
7. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any
addressable memory location. The register is composed of latches that store the commands, along
with the address and data information needed to execute the command. The contents of the
register serve as inputs to the internal state machine. The state machine outputs dictate the
function of the device. Table 7.1 lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of these operations in
further detail.
Table 7.1 ES29LV160F Device Bus Operations
Operation CE# OE# WE# RESET#
Read
Write
L
L
Standby
VCC ±
0.3 V
L
H
X
HH
LH
X
VCC ±
0.3 V
Addresses
(Note 1)
AIN
AIN
X
DQ0-
DQ7
DOUT
DIN
DQ8-DQ15
BYTE#
=VIH
DOUT
DIN
BYTE#
=VIL
DQ8-DQ14
= High-Z,
DQ15 = A-1
High-Z High-Z
High-Z
Output L H H
Disable
Reset
XX
X
Sector
Protect L H L
(Note 2)
H
X
High-Z High-Z
High-Z
L
X
High-Z High-Z
High-Z
Sector Address,
VID
A6=L, A1=H,
DIN
A0=L
X
X
Sector
Unprotect
L
H
L
(Note 2)
Sector Address,
VID
A6 = H, A1 = H,
DIN
A0 = L
X
X
Temporary
Sector X X X
Unprotect
VID
AIN
DIN DIN
High-Z
Legend
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In,
DIN = Data In, DOUT = Data Out
Notes
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector
Protection/ Unprotection on page 18.
Rev.0A (Dec 12, 2007) 11

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