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PDF BUK208-50Y Data sheet ( Hoja de datos )
| Número de pieza | BUK208-50Y | |
| Descripción | (BUK213-50Y / BUK208-50Y) Single channel high-side TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
Rev. 02 — 06 June 2002
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK208-50Y in SOT263B-01
BUK213-50Y in SOT426 (D2-PAK).
1.2 Features
s Very low quiescent current
s Power TrenchMOS™
s Overtemperature protection
s Over and undervoltage protection
s Reverse battery protection
s Low charge pump noise
s Loss of ground protection
s CMOS logic capability
s Negative load clamping
s Overload protection
s ESD protection for all pins
s Diagnostic status indication
s Operating voltage down to 5.5 V
s Current limitation.
1.3 Applications
s 12 and 24V grounded loads
s Inductive loads
s High inrush current loads
s Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Symbol
RBLon
IL
IL(nom)
IL(lim)
VBG
Quick reference data
Parameter
on-state resistance at 25 °C
continuous load current
nominal load current (ISO)
limiting load current
operating voltage
Min Max Unit
- 100 mΩ
- 8.5 A
3.6 -
A
12 24 A
5.5 35
V
1 page  
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
7. Static characteristics
Table 6: Static characteristics
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Clamping voltage
VBG battery-ground voltage
VBL battery-load voltage
VLG negative load-ground
www.DataSheeVt4LGU.com negative load voltage
Supply voltage
IG = 1 mA; Figure 6
IL = IG = 1 mA
IL = 10 mA; Figure 12 and 14
IL = 2 A; tp = 300 µs
50 55
50 55
−18 −23
[1] −20 −25
VBG operating range
Current
battery-ground
5.5 -
IB quiescent current
IL off-state load current
IG operating current
IL(nom) nominal load current (ISO)
Resistance [4]
VLG = 0 V; Figure 10
Tmb = 150 °C
Tmb = 25 °C
VBL = VBG
Tmb = 150 °C
Tmb = 25 °C
Figure 6
VBL = 0.5 V; Tmb = 85 °C
[2]
-
-
-
0.1
-
-
-
[3] 3.6
-
0.1
2
-
RBLon
on-state resistance
RG internal ground resistance
Input [5]
9 ≤ VBG ≤ 35 V; IL = 2 A; Figure 5
Tmb = 25 °C
Tmb = 150 °C
VBG = 6 V; IL = 2 A
Tmb = 25 °C
Tmb = 150 °C
IG = 10 mA
- 80
--
- 100
--
95 150
II input current
VIG input clamping voltage
VIG(ON) input turn-on threshold voltage
VIG(OFF) input turn-off threshold voltage
∆VIG
input turn-on threshold hysteresis
II(ON)
input turn-on current
II(OFF)
input turn-off current
Low current detection [6][9]
VIG = 5 V
II = 200 µA
Figure 9
VIG = 3 V
VIG = 1.5 V
20 90
5.5 7
- 2.4
1.5 2.1
- 0.3
--
10 -
IL(LC)
low current detection threshold
∆IL(LC) hysteresis
Undervoltage [9]
Tmb = −40 to +150 °C
Tmb = 25 °C; Figure 15
90 -
150 300
- 60
VBG(UV) low supply threshold voltage
[7] 2
4.2
Max
65
65
−28
−30
35
20
2
20
1
4
-
100
200
125
250
190
160
8.5
3
-
-
100
-
600
450
-
5.5
Unit
V
V
V
V
V
µA
µA
µA
µA
mA
A
mΩ
mΩ
mΩ
mΩ
Ω
µA
V
V
V
V
µA
µA
mA
mA
mA
V
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
td(sc)
www.DataSheet4U.com
IL
0V
5V
VSG
0.7 V
0V
5V
VIG
0
VBL ≥ VBL(TO)
Fig 16. Short circuit protection waveforms.
03pa49
9397 750 09384
Product data
Rev. 02 — 06 June 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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