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부품번호 | IRL3303LPBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3303S)
l Low-profile through-hole (IRL3303L)
l 175°C Operating Temperature
www.DataSheet4U.com l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95578
IRL3303LPbF
IRL3303SPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 0.026Ω
ID = 38A
S
D 2 Pak
TO-262
Max.
38
27
140
3.8
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/20/04
IRL3303S/LPbF
www.DataSheet4U.com
1600
1400
1200
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Ciss Coss = Cds + C gd
1000
800
Coss
600
Crss
400
200
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 I D = 20A
12
VDS = 24V
VDS = 15V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.0 0.5 1.0 1.5 2.0 2.5
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10ms
1 10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 www.DataSheet4U.com
IRL3303S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
RG
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
www.irf.com
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL3303LPBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |