Datasheet 3DD13001 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	3DD13001	TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and s	Jiangsu Changjiang Electronics	transistor
2	3DD13001	Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage j	TRANSYS Electronics	transistor
3	3DD13001	NPN Plastic-Encapsulated Transistor 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F	SeCoS	transistor
4	3DD13001	NPN Transistors SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Em	Kexin	transistor
5	3DD13001	NPN Transistor	WEJ	transistor

3DD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	3DD10	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th	Shaanxi Qunli Electric	transistor
2	3DD100	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.	Shaanxi Qunli Electric	transistor
3	3DD101	NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.	Shaanxi Qunli Electric	transistor
4	3DD101	(3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	ETC	data
5	3DD101A	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Desi	Inchange Semiconductor	transistor
6	3DD101A	Discrete semiconductor devices power transistor Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	SJ	transistor
7	3DD101A	(3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com	ETC	data

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Número de pieza	Descripción	Fabricantes	PDF
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