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PDF 3DD13003 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13003 | |
| Descripción | Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD13003 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
3DD13003 TRANSISTOR (NPN)
TO-220
FEATURES
Power dissipation
1. BASE
aSheet4U.com
PCM:
1.5 W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
3. EMITTER
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000µA, IE=0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000µA, IC=0
9
Collector cut-off current
ICBO VCB= 700V, IE=0
1000
Collector cut-off current
ICEO VCE= 400V, IB=0
500
Emitter cut-off current
IEBO VEB= 9V, IC=0
1000
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 0.5 A
VCE= 10V, IC= 0.5 mA
8
5
40
Collector-emitter saturation voltage
VCE(sat) IC=1000mA, IB=250 mA
1
Base-emitter saturation voltage
VBE(sat) IC=1000mA, IB= 250mA
1.2
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE IE= 2000 mA
fT
Ic=100mA, VCE=10V
f=1MHZ
5
tf Vcc=100V, Ic=1A
ts IB1=-IB2=0.2A
3
0.5
2.5
UNIT
V
V
V
µA
µA
µA
V
V
V
MHZ
µS
µS
CLASSIFICATION OF hFE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 3DD13003.PDF ] | |
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