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PDF iT2008 Data sheet ( Hoja de datos )
| Número de pieza | iT2008 | |
| Descripción | Power Amplifier | |
| Fabricantes | gigoptix | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de iT2008 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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iT2008
10 MHz – 26.5 GHz High-Power Amplifier
Description
The iT2008 is a broadband GaAs MMIC traveling wave amplifier designed for high output
power applications where low-frequency extension capabilities are also required. The iT2008
provides a saturated output power of 1 W up to 7 GHz, greater than 29 dBm up to 15 GHz and
greater than 25 dBm at 26.5 GHz. Average gain of 10 dB with flatness of +/-1 dB is provided
up to 26.5 GHz. DC power consumption is as low as 3.1 W. Input/output ports are DC coupled.
Features
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¾ Frequency range: 2 GHz – 26.5 GHz with low-
frequency extension capability down to 10 MHz
¾ 30 dBm nominal Psat (2 GHz – 7 GHz)
¾ 29 dBm nominal Psat (7 GHz – 15 GHz)
¾ >25 dBm nominal Psat at 26.5 GHz
¾ 10 dB nominal gain with +/-1 dB flatness
¾ 3.1 W DC power consumption
¾ Nominal DC bias conditions: 9 V at 350 mA
¾ Full chip passivation for high reliability
VDD
IN OUT
VGG1
Absolute
Ratings
Symbol Parameters/conditions
VDD Positive supply voltage
VGG1 Negative supply voltage
IDD Positive supply current
IGG1 Negative supply current
Pin RF input power
Pdiss_DC DC power dissipation (no RF)
Tch Operating channel temperature
Tm Mounting temperature (30 s)
Tst Storage temperature
Min. Max. Units
11 V
-2 0 V
900 mA
1.8 mA
25 dBm
5W
150 °C
320 °C
-65 150 °C
Electrical
Characteristics
(at 25 °C) 50-ohm
system, VDD=+9 V,
Quiescent current
(IDQ)=350 mA
(*) Low frequency
extension available.
Symbol Parameters/conditions
Min. Typ. Max. Units
BW Frequency range*
2 26.5 GHz
S21 Small signal gain
8 10
dB
Gain flatness
+/-1 dB
S11 Input return loss
10 15
dB
S22 Output return loss
8 12
dB
S12 Isolation
30 dB
Psat Saturated output power (3 dB gain compression)
2 - 10 GHz
27.5 29.5
dBm
2 - 20 GHz
26.5 28.5
dBm
2 - 26.5 GHz
23 25
dBm
P1dB Output power (1 dB gain compression)
2 - 10 GHz
27 29
dBm
2 - 20 GHz
26 28
dBm
2 - 26.5 GHz
22.5 24.5
dBm
For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937,
1
1 page  
Recommended
Assembly
Diagram for
2 to 26.5 GHz
Applications
www.DataSheet4U.com
iT2008
10 MHz – 26.5 GHz High-Power Amplifier
VDD (option 1)
100 uF
RF In
VGG1
RF Output
and VDD (option 2)
thru bias tee
1. For applications at 2 GHz and above, only an inductor of Lc> = 3 nH
(1 mil long bond wire >2.5 mm) is necessary to provide drain bias.
2. Bypass capacitor must be large enough to isolate bias supply (> = 10 µF)
For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937,
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet iT2008.PDF ] | |
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