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PDF CSB834 Data sheet ( Hoja de datos )
| Número de pieza | CSB834 | |
| Descripción | PNP SILICON POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CSB834 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER TRANSISTOR
CSB834
TO-220
www.DataSheet4U.com
Audio Frequency Power Amplifier Applications.
Complementary CSD880
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
60
Collector -Emitter Voltage
VCEO
60
Emitter- Base Voltage
VEBO
7.0
Collector Current
IC
3.0
Base Current IB 0.5
Power Dissipation @ Ta=25 deg C
PC
1.5
Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Cut off Current
ICBO
VCB=60V, IE=0
--
Emitter Cut off Current
IEBO
VEB=7V, IC=0
--
Collector Emitter Voltage
VCEO
IC=50mA, IB=0
60 -
DC Current Gain
hFE IC=0.5A, VCE=5V 60 -
IC=3A, VCE=5V
20 -
Collector Emitter Saturation Voltage
VCE(Sat) IC=3A, IB=0.3A
--
Base Emitter on Voltage
VBE(on) IC=0.5A, VCE=5V - -
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.5A,
- 9.0
Collector Output Capacitance
Cob VCB=10V, IE=0
- 150
f=1MHz
Switching Time
Turn-0n Time
ton VCC=30V,
- 0.4
Storage Time
tstg IB1=IB2=0.2A,
- 1.7
Fall Time
tf
Pulse Width=20us
- 0.5
Duty Cycle=1%
hFE CLASSIFICATION:-
O : 60 -120, Y : 100 -200
MAX
100
100
-
200
-
1.0
1.0
-
-
-
-
-
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
uA
uA
V
V
V
MHz
pF
us
us
us
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSB834.PDF ] | |
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