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PDF FDS6689S Data sheet ( Hoja de datos )
| Número de pieza | FDS6689S | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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February 2005
FDS6689S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6689S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
www.DataSheet4U•.cSoynmchronous Rectifier for DC/DC converter –
• Notebook Vcore low side switch
• Point of Load low side switch
Features
• 16 A, 30 V.
RDS(ON) = 5.4 mΩ @ VGS = 10 V
RDS(ON) = 6.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
• 100% RG (Gate Resistance) tested
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6689S
FDS6689S
13’’
5
6
7
8
Ratings
30
±20
16
50
2.5
1.2
1
–55 to +125
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6689S Rev B (W)
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6689S.
www.DataSheet4U.com
TIME : 12.5ns/div
Figure 12. FDS6689S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6688).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6688) body
diode reverse recovery characteristic.
FDS6689S Rev B (W)
5 Page | ||
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