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BUK7C06-40AITE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7C06-40AITE
기능 N-channel TrenchMOS standard level FET
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BUK7C06-40AITE 데이터시트, 핀배열, 회로
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and
overtemperature protection.
www.DataSheet4U.com 1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor
1.3 Applications
s Variable valve timing for engines
s Automotive and power switching
s Electrical power assisted steering
s Fan control
1.4 Quick reference data
s VDS 40 V
s ID 155 A
s RDSon = 4.7 m(typ)
s VF = 658 mV (typ)
s SF = 1.54 mV/K (typ)
s ID/Isense = 615 (typ)
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
7
mb
Pinning
Description
gate (G)
Isense
anode (A)
drain (D)
cathode (K)
kelvin source
source (S)
mounting base; connected to
drain (D)
Simplified outline Symbol
mb D A
4
123 567
SOT427 (D2PAK)
G
Isense S K
Kelvin source
sym110




BUK7C06-40AITE pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-a)
thermal resistance from junction to ambient
[1] - - 50 K/W
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 0.55 K/W
[1] Mounted on printed-circuit board; minimum footprint
03ni29
1
www.DataSheZteh(tj-4mbU) .coδm= 0.5
(K/W)
101
0.2
0.1
0.05
102
0.02
single shot
P δ = tp
T
103
106
105
104
103
102
101
tp
T
1
tp (s)
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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BUK7C06-40AITE 전자부품, 판매, 대치품
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
12
RDSon
(m)
10
Label is VGS (V)
8
03ni23
5.5
6.0
2.0
a
1.6
1.2
03ni30
6
4
www.DataSheet4U.com
2
0
40
Tj = 25 °C; tp = 300 µs
7.0
8.0
9.0
10.0
80 120
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0.8
0.4
0
60
0
60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
VGS(th)
(V)
4
max
03aa32
101
ID
(A)
102
03aa35
min typ max
3 typ
103
2 min
104
1 105
0
60
0
60 120 180
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
106
0246
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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BUK7C06-40AITE

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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