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PDF BUK7C06-40AITE Data sheet ( Hoja de datos )
| Número de pieza | BUK7C06-40AITE | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and
overtemperature protection.
www.DataSheet4U.com 1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor
1.3 Applications
s Variable valve timing for engines
s Automotive and power switching
s Electrical power assisted steering
s Fan control
1.4 Quick reference data
s VDS ≤ 40 V
s ID ≤ 155 A
s RDSon = 4.7 mΩ (typ)
s VF = 658 mV (typ)
s SF = −1.54 mV/K (typ)
s ID/Isense = 615 (typ)
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
7
mb
Pinning
Description
gate (G)
Isense
anode (A)
drain (D)
cathode (K)
kelvin source
source (S)
mounting base; connected to
drain (D)
Simplified outline Symbol
mb D A
4
123 567
SOT427 (D2PAK)
G
Isense S K
Kelvin source
sym110
1 page  
Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9
Tj = 25 °C
www.DataSheet4U.com
Tj = 175 °C
Tj = −55 °C
IDSS drain leakage current
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
V(BR)GSS gate-source breakdown
voltage
IG = ±1 mA; −55 °C < Tj < +175 °C
IGSS gate leakage current
RDSon
drain-source on-state
resistance
VF forward voltage of
temperature sense diode
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A; see Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
IF = 250 µA
SF
temperature coefficient of
IF = 250 µA; −55 °C < Tj < +175 °C
temperature sense diode
Vhys forward voltage hysteresis of 125 µA < IF < 250 µA
temperature sense diode
ID/Isense ratio of drain current to sense VGS = 10 V; −55 °C < Tj < +175 °C
current
Dynamic characteristics
QG(tot) total gate charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
QGS gate-source charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
QGD
gate-drain charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
Ciss input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Coss output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Min Typ Max Unit
40 - - V
36 - - V
234V
1- - V
- - 4.4 V
-
0.1 10
µA
- - 250 µA
20 22 -
V
- 22 1000 nA
- - 10 µA
-
4.7 6
mΩ
- - 11.4 mΩ
648 658 668 mV
−1.4 −1.54 −1.68 mV/K
25 32 50 mV
585 615 645
- 120 - nC
- 19 - nC
- 50 - nC
- 4300 - pF
- 1400 - pF
- 820 - pF
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
8. Soldering
1.50
2.25 2.15
www.DataSheet4U.com
8.15 8.35
1.50
4.60
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
10.85
10.60
10.50
7.50
7.40
1.70
8.275
4.85
7.95
0.30
3.00
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig 20. Reflow soldering footprint for SOT427
1.27
(4×)
2.54
8.92
5.40
8.075
0.20
0.70
0.80
MSD059
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 14
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