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BUK7C08-75AITE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7C08-75AITE
기능 TrenchPLUS standard level FET
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BUK7C08-75AITE 데이터시트, 핀배열, 회로
BUK7C10-75AITE
TrenchPLUS standard level FET
Rev. 02 — 18 March 2003
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance. Also includes
TrenchPLUS current sensing, and diodes for ESD and temperature protection.
Product availability:
BUK7C10-75AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines
s Automotive and power switching
s Electrical Power Assisted Steering
s Fan control.
1.4 Quick reference data
s VDS 75 V
s ID 114 A
s RDSon = 8.8 m(typ)
s VF = 658 mV (typ)
s SF = 1.54 mV/K (typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT427 (D2-PAK) simplified outline and symbol
Pin Description Pin Description Simplified outline
1 gate (g)
5 cathode (k)
2 Isense
3 anode (a)
6 Kelvin source
7 source (s)
mb
4 drain (d)
mb mounting base;
connected to
drain (d)
1234567
Front view
MBK128
SOT427 (D2-PAK)
Symbol
da
g
MBL362
sk
Isense
Kelvin source




BUK7C08-75AITE pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-mb) thermal resistance from junction to
mounting base
Conditions
mounted on printed-circuit board;
minimum footprint
Figure 4
4.1 Transient thermal impedance
Min Typ Max Unit
- - 50 K/W
- - 0.55 K/W
www.DataSheet4U.com 1
Z th(j-mb)
(K/W)
δ = 0.5
03ni64
10-1
10-2
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
P
δ
=
tp
T
10-1
tp
T
t
1 tp(s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7C08-75AITE 전자부품, 판매, 대치품
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
350
03ni74
ID
(A)
280
10
20
9 label is VGS (V)
8.5 8
7.5
210 7
6.5
140 6
5.5
70
5
4.5
0
www.DataSheet4U0.com 2
4
6
8 10
VDS (V)
18
RDSon
(m)
14
03ni76
10
6
5 10 15 VGS (V) 20
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
RDSon
(m)
VGS = 5.5 V 6 V 6.5 V 7 V
16
12
03ni75
8V
10 V
20 V
2.4
a
1.6
0.8
03nb25
8
0 70 140 210 280 ID (A)350
0
-60 0 60 120 Tj (°C) 180
Tj = 25 °C; tp = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7C08-75AITE

TrenchPLUS standard level FET

NXP Semiconductors
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