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Número de pieza | BUF654 | |
Descripción | Silicon NPN High Voltage Switching Transistor | |
Fabricantes | TEMIC Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUF654 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BUF654
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
www.DataSheet4U.coDm Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25° C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
500
700
9
12
18
6
9
80
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
Value
1.56
Unit
K/W
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
1 (9)
1 page BUF654
Typical Characteristics (Tcase = 25_ C unless otherwise specified)
14
12
10
www.DataSheet4U.com
8
0.1 x IC < IB2 < 0.5 x IC
6 VCEsat < 2 V
4
2
0
0
95 10572
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
Figure 4. VCEW – Diagram
100
1.56 K/W
10 12.5 K/W
1
25 K/W
0.1
50 K/W
0.01 RthJA = 85 K/W
0.001
0
95 10509
25 50 75 100 125 150
Tcase ( °C )
Figure 7. Ptot vs.Tcase
10
Tj = 25°C
8
6
IB = 1A
600 mA
400 mA
4
2
0
0
95 9747
200 mA
100 mA
50 mA
2 4 6 8 10
VCE - Collector Emitter Voltage (V)
Figure 5. IC vs. VCE
100
VCE = 5V
VCE = 10V
10
VCE = 2V
10
1 IC = 0.5A 2A
5A 8A
0.1
0.01 Tj = 25°C
0.01 0.1
1
95 9746
IB - Base Current (A)
Figure 8. VCEsat vs. IB
100
Tj = 125°C
Tj = 25°C
Tj = –25°C
10
10
Tj = 25°C
1
0.01 0.1
1 10
94 9217
IC – Collector Current (A)
Figure 6. hFE vs. IC
100
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
1
0.01
94 9206
0.1 1 10
IC – Collector Current (A)
Figure 9. hFE vs. IC
100
5 (9)
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUF654.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUF650 | Silicon NPN High Voltage Switching Transistor | TEMIC Semiconductors |
BUF653 | Silicon NPN High Voltage Switching Transistor | TEMIC Semiconductors |
BUF654 | Silicon NPN High Voltage Switching Transistor | TEMIC Semiconductors |
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