|
|
Número de pieza | 60N03S | |
Descripción | AP60N03S | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 60N03S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP60N03S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Fast Switching
▼ Simple Drive Requirement
www.DataSheet4U.com
Description
GDS
TO-263
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03P) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
13.5mΩ
55A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
1 page AP60N03S
14
12
10
www.DataSheet4U.com
8
I D =28A
V DS =16V
V DS =20V
V DS =24V
6
4
2
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000 Ciss
Coss
Crss
100
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 60N03S.PDF ] |
Número de pieza | Descripción | Fabricantes |
60N03 | Power MOSFET ( Transistor ) | Tuofeng Semiconductor |
60N03 | N-Channel Enhancement Mode Power MOSFET | Anachip |
60N03 | N-Ch 30V Fast Switching MOSFETs | Cmos |
60N035 | N-Channel Field Effect Transistor | ETC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |