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PDF 5STP34N5200 Data sheet ( Hoja de datos )
| Número de pieza | 5STP34N5200 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | ABB | |
| Logotipo |  |
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VDSM = 5200 V
ITAVM = 3600 A
ITRMS = 5650 A
ITSM = 55000 A
VT0 = 1.03 V
rT = 0.16 mΩ
Phase Control Thyristor
5STP 34N5200
Doc. No. 5SYA1002-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
www.DataShee•t4U.cDomesigned for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 34N5200 5STP 34N5000
VDSM, VRSM f = 5 Hz, tp = 10ms
5200 V
5000 V
VDRM, VRRM f = 50 Hz, tp = 10ms
4400 V
4200 V
VRSM1
tp = 5ms, single pulse
5700 V
5500 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
Characteristic values
Parameter
Symbol Conditions
2000 V/µs
min typ
Forwarde leakage current
IDSM
VDSM, Tj = 125°C
Reverse leakage current
IRSM
VRSM, Tj = 125°C
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
5STP 34N4600
4600 V
4000 V
5100 V
max
500
500
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Surface creepage distance
Air strike distance
Symbol
FM
a
a
Conditions
Device unclamped
Device clamped
Symbol
m
DS
Da
Conditions
min
81
typ
90
max
108
50
100
Unit
kN
m/s2
m/s2
min
56
22
typ
2.9
max
Unit
kg
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5STP 34N5200
www.DataSheet4U.com
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
IG (t)
100 %
90 %
IGM ≈ 2..5 A
IGM
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr ≤ 1 µs
tp(IGM) ≈ 5...20µs
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
10 %
tr
diG/dt
tp (IGM)
tp (IGon)
IGon
t
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP34N5200.PDF ] | |
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