|
|
|
부품번호 | 6MBI150U4B-120 기능 |
|
|
기능 | IGBT MODULE | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 13 페이지수
www.DataSheet4U.com
SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 6MBI150U4B-120
Spec. No. :
MS5F 6013
Jan. 18 ’05 S.Miyashita
Jan. 18 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6013
1
13
H04-004-07b
www.DataSheet4U.com
3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Symbols
Conditions
Max i m u m
Ratings
Units
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20 V
Ic
Continuous
Tc=25oC
Tc=80oC
200
150
Collector current
Icp
1ms
Tc=25oC
Tc=80oC
400
300
A
-Ic 150
-Ic pulse
1ms
300
Collector Power Dissipation
Pc 1 device
735 W
Junction temperature
Storage temperature
Tj
Tstg
+150
-40 to +125
oC
Isolation between terminal and copper base (*1)
voltage between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw
Torque
Mounting (*3)
-
3.5 N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
- - 1.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
- - 200
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=150mA
4.5 6.5 8.5
VCE(sat) Ic=150A
Tj=25oC
-
2.45 2.60
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.65
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
17
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=150A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=2.2Ω
tf
- 0.41 1.00
- 0.07 0.30
VF
IF=150A
Tj=25oC
-
2.20 2.35
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125oC
Tj=25oC
-
-
2.30 -
1.65 1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=150A
- - 0.35
Lead resistance,
terminal-chip (*4)
R lead
- 3.40
-
Resistance
R
T=25oC
T=100oC
- 5000
465 495
-
520
B value
B T=25/50oC
3305
3375
3450
(*4) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
Ω
K
MS5F6013
4
13
H04-004-03a
4페이지 www.DataSheet4U.com
Reliability Test Items
Test
cate-
gories
Test items
1 High temperature
Reverse Bias
2 High temperature
Bias (for gate)
3 Temperature
Humidity Bias
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test methods and conditions
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 85±2 oC
: 85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
: Tj=100±5 deg
Tj ≦ 150 ℃, Ta=25±5 ℃
: 15000 cycles
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
Test Method 101 5 ( 0 : 1 )
Test Method 101 5 ( 0 : 1 )
Test Method 102 5 ( 0 : 1 )
Condition code C
Test Method 106 5 ( 0 : 1 )
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES - USL×2 mA
characteristic
±IGES
-
USL×2
A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
VCE(sat)
-
USL×1.2 V
Forward voltage
VF - USL×1.2 V
Thermal IGBT
VGE
- USL×1.2 mV
resistance
or VCE
FWD
VF - USL×1.2 mV
Isolation voltage
Viso
Broken insulation
-
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
MS5F6013
7
13
H04-004-03a
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ 6MBI150U4B-120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6MBI150U4B-120 | IGBT MODULE | Fuji Electric |
6MBI150U4B-120-50 | Power Devices (IGBT) | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |