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K6F1008R2M 데이터시트 PDF




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K6F1008R2M 데이터시트, 핀배열, 회로
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1
www.DataSheet4U.com
Revise
- Erase 100ns from KM68FS1000 Family
- Add 150ns for KM68FS1000 Family
- Add 32-sTSOP1 new package
- Add high power version
ISB1=5.0µA(Max)
- Change VDR(Min) 1.0 to 1.5V
1.0 Finalize
- Concept change high power version to low low power version
ISB1=5.0µA(Max)
- Change super low power version with special handling
ISB1=1.0µA(Max)
- Icc & Icc1(Read) decrease 10 to 5mA
2.0 Revise
- Change datasheet format
- Remove reverse type package from product
- Remove reserved speed bin(100ns)
3.0 Revise
- Add CSP type packaged product.
- Improved ICC2
Draft Date
March 15, 1996
July 7, 1996
Remark
Advance
Preliminary
December 1, 1996 Final
February 26, 1998 Final
July 29, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 3.0
July 1998




K6F1008R2M pdf, 반도체, 판매, 대치품
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
www.DataSheet4U.com
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Product
K6F1008V2M Family
K6F1008S2M Family
K6F1008R2M Family
All Family
K6F1008V2M Family
Vcc=3.3±0.3V
K6F1008S2M Family
Vcc=3.0±0.3V
Vcc=2.5±0.2V
K6F1008R2M Family
Vcc=2.5±0.2V
Vcc=2.0±0.2V
All Family
Note
1 Commercial Product : TA=0 to 70°C, unless otherwise specified
Industrial Product : TA=-40 to 85°C, unless otherwise specified
2. Overshoot : Vcc + 1.0V in case of pulse width 20ns
3. Undershoot : -1.0V in case of pulse width 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
3.0
2.3
1.8
0
2.2
2.2
2.0
2.0
1.6
-0.23)
Typ
3.3
2.5/3.0
2.0/2.5
0
Max
3.6
3.3
2.7
0
Unit
V
V
-
Vcc+0.22)
V
- 0.4 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
Symbol
CIN
CIO
1. Capacitance is sampled, not 100% tested
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 - 1 µA
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1
-
1 µA
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH, Read
- - 2 mA
Average operating current
ICC1
ICC2
Cycle time=1µs, 100% duty, IIO=0mA, CS10.2V,
CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V
Read
Write
Cycle time=Min, 100% duty, IIO=0mA,
CS1=VIL, CS2=VIH, VIN=VIL or VIH
Vcc=3.3V@70ns
Vcc=2.7V@120ns
Vcc=2.2V@300ns
-
-
-
-
-
-3
mA
10 15
- 351)
- 30 mA
- 15
2.1mA at Vcc=3.0/3.3V
Output low voltage
VOL IOL 0.5mA at Vcc=2.5V
- - 0.4 V
0.33mA at Vcc=2.0V
Output high voltage
-1.0mA at Vcc=3.0/3.3V
VOH IOH -0.5mA at Vcc=2.5V
2.4 -
-
2.0 - - V
-0.44mA at Vcc=2.0V
1.6 -
-
Standby Current(TTL)
ISB CS1=VIH or CS2=VIL, Other inputs=VIL or VIH
- - 0.3 mA
Standby Current(CMOS)
ISB1 CS1Vcc-0.2V, CS2Vcc-0.2V or CS20.2V, Other inputs=0~Vcc
-
- 51) µA
1.K6F1008V2M Family = 40mA
2. Super low power product = 1µA with special handling.
4 Revision 3.0
July 1998

4페이지










K6F1008R2M 전자부품, 판매, 대치품
K6F1008V2M, K6F1008S2M, K6F1008R2M Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS1
CS2
www.DataSheet4U.com WE
Data in
Data out
tAS(3)
Data Undefined
tWC
tCW(2)
tWR(4)
tAW
tCW(2)
tWP(1)
tWHZ
tDW tDH
Data Valid
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
Address
CS1
tAS(3)
tWC
tCW(2)
tAW
tWR(4)
CS2
tWP(1)
WE
Data in
tDW tDH
Data Valid
Data out
High-Z
High-Z
7 Revision 3.0
July 1998

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K6F1008R2M

SRAM

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