|
|
Datasheet 5SHY35L4512 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 5SHY35L4512 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 35×103 1.15 0.21 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4512
Doc. No. 5SYA1233-02 June 07
• Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and wide temperature range � | ABB | thyristor |
5SH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 5SHY35L4510 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 32×103 1.4 0.325 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4510
Doc. No. 5SYA1232-02 June 07
• High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and wide temperature range • ABB thyristor | | |
2 | 5SHY35L4511 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 3800 28×103 1.7 0.457 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4511
Doc. No. 5SYA1234-02 June 07
• High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and low turn-off losses • Hi ABB thyristor | | |
3 | 5SHY35L4512 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 35×103 1.15 0.21 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4512
Doc. No. 5SYA1233-02 June 07
• Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and wide temperature range � ABB thyristor | | |
4 | 5SHY42L6500 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
6500 4200 26×103 2.0 0.54 4000
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 42L6500
PRELIMINARY
Doc. No. 5SYA1245-00 Aug 07
• High snubberless turn-off rating • Wide temperature range • High electrom ABB thyristor | | |
5 | 5SHY42L6530 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
6500 4200 26×103 2.0 0.54 4000
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 42L6530
PRELIMINARY
Doc. No. 5SYA1246-00 Aug. 07
• High snubberless turn-off rating • Wide temperature range • High electro ABB thyristor | | |
6 | 5SHY55L4500 | Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 5500 33×103 1.3 0.26 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 55L4500
PRELIMINARY
Doc. No. 5SYA1243-01 Aug 07
• High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) • High www.DataShe ABB thyristor | |
Esta página es del resultado de búsqueda del 5SHY35L4512. Si pulsa el resultado de búsqueda de 5SHY35L4512 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |