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BUK9907-40ATC 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK9907-40ATC은 전자 산업 및 응용 분야에서
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부품번호 BUK9907-40ATC 기능
기능 N-channel TrenchPLUS logic level FET
제조업체 NXP Semiconductors
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BUK9907-40ATC 데이터시트, 핀배열, 회로
BUK9907-40ATC
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
VGS = 5 V; Tmb = 25 °C; see Figure 3; see Figure 2 [1]
Tmb = 25 °C; see Figure 1
-
-
-55
-
-
-
140 A
272 W
175 °C
RDSon drain-source on-state
resistance
SF(TSD)
temperature sense
diode temperature
coefficient
VGS = 5 V; ID = 50 A; Tj = 25 °C; see Figure 7;
see Figure 8
VGS = 4.5 V; ID = 50 A; Tj = 25 °C
VGS = 10 V; ID = 50 A; Tj = 25 °C
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-
5.8 7
m
- 6 7.7 m
- 5.2 6.2 m
1.4 1.54 1.68 mV/K
VF(TSD) temperature sense
diode forward voltage
648 658 668 mV
[1] Current is limited by power dissipation chip rating.




BUK9907-40ATC pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK9907-40ATC
N-channel TrenchPLUS logic level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
150
ID
(A)
125
03ne74
100
75
Capped at 75 A due to package
50
25
0
25 50 75 100 125 150 175 200
Tmb(oC)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
03ne75
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
1 10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9907-40ATC_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK9907-40ATC 전자부품, 판매, 대치품
NXP Semiconductors
BUK9907-40ATC
N-channel TrenchPLUS logic level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
LD internal drain
inductance
LS internal source
inductance
Source-drain diode
measured from upper edge of drain
mounting base to centre of die; Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 19
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 85 - ns
- 250 - nC
BUK9907-40ATC_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK9907-40ATC

N-channel TrenchPLUS logic level FET

NXP Semiconductors
NXP Semiconductors

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