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PDF MR756 Data sheet ( Hoja de datos )

Número de pieza MR756
Descripción (MR750 - MR7510) 6.0A STANDARD DIODE
Fabricantes on-Top Electronics 
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No Preview Available ! MR756 Hoja de datos, Descripción, Manual

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
MR750 – MR7510 Pb
6.0A STANDARD DIODE
AB
A
Mechanical Data
! Case: P-600, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 2.1 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
P-600
Dim Min Max
A 25.4 —
B 8.60 9.10
C 1.20 1.30
D 8.60 9.10
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol MR750 MR751 MR752 MR754 MR756 MR758 MR7510 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@IF = 6.0A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
50
35
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
6.0 A
400 A
1.0 V
5.0 µA
1.0 mA
150 pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
20 °C/W
Operating Temperature Range
Storage Temperature Range
Tj
TSTG
-50 to +150
-50 to +150
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MR750 – MR7510
1 of 4
© 2006 Won-Top Electronics

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