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CGH35015F 데이터시트 PDF




Cree에서 제조한 전자 부품 CGH35015F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 CGH35015F 자료 제공

부품번호 CGH35015F 기능
기능 GaN HEMT
제조업체 Cree
로고 Cree 로고


CGH35015F 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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CGH35015F 데이터시트, 핀배열, 회로
PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.16-2004 WiMAX Fixed Access
applications. GaN HEMTs offer high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz
www.DataSheeWt4UiM.cAomX and BWA amplifier applications. The transistor is available in a
flange package.
PackagPeNT:yCpGe:H3454001156F6
Typical Performance 3.4-3.9GHz (TC = 25˚C)
Parameter
Gain @ POUT = 2 W
POUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
3.4 GHz
11.6
33.0
23.0
3.5 GHz
11.8
33.0
23.0
3.6 GHz
12.0
33.0
24.0
3.8 GHz
11.8
33.5
18.0
3.9 GHz
11.2
33.5
17.0
Units
dB
dBm
%
Input Return Loss
4.0 4.5 6.0 13.0 9.0
dB
Note:
Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
3.3 - 3.9 GHz Operation
>11 dB Small Signal Gain
>2.0 W POUT at 2.0 % EVM
24 % Efficiency at 2.0 W POUT
15 W Typical P3dB
WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless





CGH35015F pdf, 반도체, 판매, 대치품
Typical WiMAX Performance
Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz
F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB
WiMax EVM & Eff. vs. Pout at 3.6GHz
4.0 40
3.5 35
www.DataSheet4U.com
3.0
2.5
2.0
EVM(3.6)
Eff(3.6)
30
25
20
1.5 15
1.0 10
0.5 5
0.0 0
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Note:
Average Power Out (dBm)
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Typical Constellation Chart, Spectral Mask, and EVM of
CGH35015F in Broadband Amplifier Circuit at 3.6 GHz
VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH35015F Rev 1.6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless

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CGH35015F 전자부품, 판매, 대치품
CGH35015F-TB Demonstration Amplifier Circuit Schematic
www.DataSheet4U.com
CGH35015F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
C1
C2
C10,C11
C4
C5,C13
C14
C6
C7,C15
C8
C16
C17
R1,R2
R3
R4
J1
J2
J3,J4
Q1
Description
CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S
CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S
CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S
CAP, 10.0pF, +/-5%, 0603, ATC 600S
CAP, 39 PF±5%, 0603, ATC 600S
CAP, 100 PF±5%, 0603, ATC 600S
CAP, 470 PF ±10%,100 V, 0603
CAP, 33000PF, 100V, 0805, X7R
CAP, 10UF, 16V, SMT, TANTALUM (240096)
CAP, 1.0UF ±10%, 100V, 1210, X7R
CAP, 33UF, 100V, ELECT, FK, SMD
RES, 1/16W, 0603, 0 Ohms, 1%
RES, 1/16W, 0603, 47 Ohms ≤5%
RES, 1/16W, 0603, 100 Ohms ≤5%
5-PIN, MOLEX, MALE, CONNECTOR
2-PIN, MOLEX, MALE, CONNECTOR
SMA, FEMALE, CONNECTOR
CGH35015
Qty
1
1
2
1
2
1
1
2
1
1
1
2
1
1
1
1
2
1
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH35015F Rev 1.6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless

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