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부품번호 | CGH35015F 기능 |
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기능 | GaN HEMT | ||
제조업체 | Cree | ||
로고 | |||
전체 9 페이지수
PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.16-2004 WiMAX Fixed Access
applications. GaN HEMTs offer high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz
www.DataSheeWt4UiM.cAomX and BWA amplifier applications. The transistor is available in a
flange package.
PackagPeNT:yCpGe:H3454001156F6
Typical Performance 3.4-3.9GHz (TC = 25˚C)
Parameter
Gain @ POUT = 2 W
POUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
3.4 GHz
11.6
33.0
23.0
3.5 GHz
11.8
33.0
23.0
3.6 GHz
12.0
33.0
24.0
3.8 GHz
11.8
33.5
18.0
3.9 GHz
11.2
33.5
17.0
Units
dB
dBm
%
Input Return Loss
4.0 4.5 6.0 13.0 9.0
dB
Note:
Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 3.3 - 3.9 GHz Operation
• >11 dB Small Signal Gain
• >2.0 W POUT at 2.0 % EVM
• 24 % Efficiency at 2.0 W POUT
• 15 W Typical P3dB
• WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless
Typical WiMAX Performance
Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz
F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB
WiMax EVM & Eff. vs. Pout at 3.6GHz
4.0 40
3.5 35
www.DataSheet4U.com
3.0
2.5
2.0
EVM(3.6)
Eff(3.6)
30
25
20
1.5 15
1.0 10
0.5 5
0.0 0
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Note:
Average Power Out (dBm)
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Typical Constellation Chart, Spectral Mask, and EVM of
CGH35015F in Broadband Amplifier Circuit at 3.6 GHz
VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35015F Rev 1.6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
4페이지 CGH35015F-TB Demonstration Amplifier Circuit Schematic
www.DataSheet4U.com
CGH35015F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
C1
C2
C10,C11
C4
C5,C13
C14
C6
C7,C15
C8
C16
C17
R1,R2
R3
R4
J1
J2
J3,J4
Q1
Description
CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S
CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S
CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S
CAP, 10.0pF, +/-5%, 0603, ATC 600S
CAP, 39 PF±5%, 0603, ATC 600S
CAP, 100 PF±5%, 0603, ATC 600S
CAP, 470 PF ±10%,100 V, 0603
CAP, 33000PF, 100V, 0805, X7R
CAP, 10UF, 16V, SMT, TANTALUM (240096)
CAP, 1.0UF ±10%, 100V, 1210, X7R
CAP, 33UF, 100V, ELECT, FK, SMD
RES, 1/16W, 0603, 0 Ohms, 1%
RES, 1/16W, 0603, 47 Ohms ≤5%
RES, 1/16W, 0603, 100 Ohms ≤5%
5-PIN, MOLEX, MALE, CONNECTOR
2-PIN, MOLEX, MALE, CONNECTOR
SMA, FEMALE, CONNECTOR
CGH35015
Qty
1
1
2
1
2
1
1
2
1
1
1
2
1
1
1
1
2
1
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35015F Rev 1.6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGH35015 | GaN HEMT | Cree |
CGH35015F | GaN HEMT | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |