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Número de pieza | CGH40025F | |
Descripción | GaN HEMT | |
Fabricantes | Cree | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGH40025F (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! PRELIMINARY
CGH40025F
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40025, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
www.DataSheetth4Ue.cCoGmH40025 ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package.
PackagPeNT:yCpGe:H4404002156F6
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 30 W typical P3dB
• 62 % Efficiency at P3dB
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1 page Source and Load Impedances
Z Source
G
D
Z Load
www.DataSheet4U.com
S
Frequency (MHz)
500
1000
1500
2500
3500
Z Source
2.0 + j 12.5
2.0 + j 11.8
1.9 + j 1.0
2.1 - j 5.4
2.2 - j 9.7
Z Load
10.9 + j 1.2
10.7 + j 4.2
9.2 + j 1.7
8.7 - j 1.7
6.5 - j 4.3
Note 1. VDD = 28V, IDQ = 200mA in the 440166 package.
Note 2. Optimized for P1dB and Efficiency
Note 3. When using this device at low frequency, series resistors
should be used to maintain amplifier stability.
CGH40025F Power Dissipation De-rating Curve
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175 200
Maximum Case Temperature (°C)
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
CGH40025 Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
5 Page Product Dimensions CGH40025F (Package Type — 440166)
www.DataSheet4U.com
PRELIMINARY
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
11 CGH40025 Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet CGH40025F.PDF ] |
Número de pieza | Descripción | Fabricantes |
CGH40025 | RF Power GaN HEMT | Cree |
CGH40025F | GaN HEMT | Cree |
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