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부품번호 | CGH40045 기능 |
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기능 | GaN HEMT | ||
제조업체 | Cree | ||
로고 | |||
전체 12 페이지수
PRELIMINARY
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40045, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
www.DataSheetth4Ue.cCoGmH40045 ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
PackagePNTy: pCeGs:H4404004159F3
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• >16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical P3dB
• 55 % Efficiency at P3dB
• 28 V Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
Typical Performance
Pulsed Gain and Output Power vs Input Power of
the CGH40045F measured in Amplifier Circuit CGH40045F-TB
VDD = 28 V, IDQ = 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle
13 60
www.DataSheet4U.com
12
11
10
9
Gain
POUT
50
40
30
20
8 10
70
5 10 15 20 25 30 35 40
Input Power (dBm)
Simulated Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
500
1000
2000
3000
4000
Z Source
3.34 + j4.56
2.07 + j0.05
1.3 – j3.37
1.64 – j8.15
1.9 – j10.8
Z Load
10.8 + j8.24
6.18 + j4.17
4.65 + j0.05
4.75 – j3.4
4.56 – j7.9
Note 1. VDD = 28V, IDQ = 800mA in the 440193 package.
Note 2. Optimized for P3dB and Drain Efficiency
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH40045 Rev 1.1 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
4페이지 CGH40045F-TB Demonstration Amplifier Circuit
www.DataSheet4U.com
CGH40045F-TB Demonstration Amplifier Circuit Bill of Materials
Designator
C1
C2
C3,C10
C5,C12
C6,C13
C4,C11
C8
C9
C7,C14
C15
C16
R1
R2
L1
L2
J1,J2
J3
Q1
Description
CAP, 6.8pF, ± -0.25 pF, 0603
CAP, 1.8pF, ± -0.1 pF, 0603
CAP, 5.6pF, ± -0.1pF, 0603
CAP, 10000pF, 100V, TEMP STBL, 0805
CAP, 0.1uF ±10%, 100 V, 1206, X7R
CAP, 100pF±5%, 0603
CAP, 10UF, 16V, SMT, TANTALUM
CAP, 0.2pF, ± -0.05pF, 0603
CAP, 1.0UF ±10%, 100V, 1210, X7R
CAP, 33UF, 20%, 100V, ELECT, FK, SMD
CAP, 4.7pF, ± 0.25pF, 0603
RES, 1/16W, 0603, 100 Ohms 1%
RES, 1/16W, 0603, 10 Ohms 1%
FERRITE, 220 OHM, 0805
FERRITE, 22 OHM, 0805
CONN, N-TYPE, FEMALE , W/ 0.500 FLANGE
CONN, HEADER, RT>PLZ .1CEN LK 9POS
CGH40045
Qty
1
1
2
2
2
2
1
1
2
1
1
1
1
1
1
2
1
1
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH40045 Rev 1.1 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ CGH40045.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGH40045 | GaN HEMT | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |