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PDF CGH27015F Data sheet ( Hoja de datos )
| Número de pieza | CGH27015F | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CGH27015F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PRELIMINARY
CGH27015F
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor
designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX
and BWA amplifier applications. The transistor is available in ceramic,
www.DataSheemt4Uet.caolmflange package.
PackagPeNT:yCpGe:H2474001156F6
Typical Performance 2.4-2.7 GHz (TC = 25˚C)
Parameter
2.4 GHz
2.5 GHz
Small Signal Gain
14.5
14.5
2.6 GHz
14.5
2.7 GHz
14.5
Units
dB
POUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
34.0
23.0
34.0
24.0
34.0
24.0
34.0
23.0
dBm
%
Input Return Loss
7.0 6.0 5.0 5.0 dB
Output Return Loss
5.0 6.0 7.0 7.0 dB
Note:
Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 2.3 - 2.9 GHz Operation
• >14.5 dB Small Signal Gain
• >2.0 W POUT at 2.0 % EVM
• 25 % Efficiency at 2.5 % EVM
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless
1 page  
Product Dimensions CGH27015F (Package Type — 440166)
www.DataSheet4U.com
PRELIMINARY
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH27015F Rev 1.7 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CGH27015F.PDF ] | |
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